Jun Tae Jang, Hyoung-Do Kim, Dong Myoung Kim, Sung-Jin Choi, Hyun-Suk Kim*, and Dae Hwan Kim*, “Observation of Divacancy Formation for ZnON Thin-Film Transistors with Excessive N content”, IEEE Electron Device Letters, vol. 42, 1006-1009 (2021),

Cheng-Fan Xiao, Jong-Heon Kim, Su-Ho Cho, Yun Chang Park, Min Jung Kim, Kwun-Bum Chung, Soon-Gil Yoon, Ji-Won Jung*, Il-Doo Kim*, and Hyun-Suk Kim*, “Ensemble Design of Electroder-Electrolyte Interfaces: Toward High-Performance Thin-Film All-Solid-State Li-Ion Batteries”, ACS Nano, vol. 15, 4561-4575 (2021),

Van-Tien Bui, Van-Toan Nguyen, Ngoc-Anh Nguyen, Umapathi Reddicherla, Liudmila L. Larina, Jong Heon Kim, and Hyun-Suk Kim, Ho-Suk Choi*, *corresponding author “Multilayered PVDF-HEF Porous Separator via Phase Separation and Selective Solvent Etching for High Voltage Lithium-Ion Batteries”, Membranes, vol. 11, 41 (2021) [Cover article],

Si Hyung Lee, Seong Cheol Jang, Su Eon Lee, and Hyun-Suk Kim*, and Jae-Kyeong Jeong*, *corresponding author, “Mobility enhancement of Indium-Gallium Oxide via oxygen diffusion induced by a metal catalytic layer”, Journal of Alloys and Compounds, vol. 862, 158009 (2021),

Song-Yi Ahn, Seong Cheol Jang, Aeran Song, Kwun-Bum Chung, Yong Joo Kim*, and Hyun-Suk Kim*, “Performance enhancement of p-type SnO semiconductor via SiOx passivation”, Materials Today Communications, vol. 26, 101747 (2021),

Jun Tae Jang, Hyoung-Do Kim, Dong Myoung Kim, Sung-Jin Choi, Hyun-Suk Kim*, and Dae Hwan Kim*, “Effects of Anion Composition on the Bias Stress Stability in Zn-O-N Thin-Film Transistors”, IEEE Electron Device Letters, vol. 41, 1376-1379 (2020),

Ji-Min Park, Hyoung-Do Kim, Seong Cheol Jang, Kyung Park, Yun Chang Park, Ho-Hyun Nahm, Sanghoon Jeon*, and Hyun-Suk Kim*, “Metal-Induced n+/n Homojunction for Ultra-High Electron Mobility Transistors”, NPG Asia Materials, vol. 21, 81 (2020). [highlighted as Feature article],

Seong Cheol Jang, Ji-Min Park, Hyoung-Do Kim, and Hyun-Suk Kim*, *corresponding author, “The Effect of Microwave Annealing Time on the Electrical Characteristics for InGaZnO Thin-Film Transistors”, Korean Journal of Materials Research, vol. 30, 615-620 (2020) [SCOPUS],

Ji-Min Park, Seong Cheol Jang, Min Jung Kim, Kwun-Bum Chung, Yong Joo Kim*, and, Hyun-Suk Kim*, “Improved Field Effect Mobility of In-Ga-Zn-O TFTs by Oxidized Metal Layer”, IEEE Transactions on Electron Devices, vol. 67, 4924-4928 (2020),

Jun Tae Jang, Hyoung-Do Kim, Dong Myoung Kim, Sung-Jin Choi, Hyun-Suk Kim*, and Dae Hwan Kim*, “Effects of Anion Composition on the Bias Stress Stability in Zn-O-N Thin-Film Transistors”, IEEE Electron Device Letters, vol. 41, 561 (2020),

Jong Heon Kim, Cheng-Fan Xiao, Jonghyun Han, Shunsuke Yagi*, Yong Joo Kim*, and Hyun-Suk Kim*, “Interface Control for High Performance All-Solid-State Li Thin Film Battery”, Ceramics International, vol. 46, 19960 (2020) .,

Ji-Min Park, Hyoung-Do Kim, Seong Cheol Jang, and Hyun-Suk Kim*, *corresponding author, “Effect of Sputtering Working Pressure on the Optical and Electrical properties of InZnO Thin-Film Transistors”, Korean Journal of Materials Research, vol. 30, 211 [SCOPUS].,

Jun Tae Jang, Hyoung-Do Kim, Dong Myoung Kim, Sung-Jin Choi, Hyun-Suk Kim*, and Dae Hwan Kim*, “Influence of nitrogen content on persistent photoconductivity in amorphous zinc oxynitride thin-film transistors”, IEEE Electron Device Letters, vol. 41, 561 (2020) .,

Aeran Song, Hyun-Woo Park, Hyoung-Do Kim, Hyun-Suk Kim*, Kwun-Bum Chung*, *corresponding author, “Significant enhancement of bias stability of Zn-O-N thin-film transistors via Si doping”, Scientific Reports, vol. 10, 719 (2020),

Jung Hyun Kim*, Sun Hun Woo, Dae Soo Park, Won Seok Choi, Hyunil Kang, Seung-Wook Baek, Hyun-Suk Kim, Tae Ho Shin, Jun-Young Park, Harald Schlegl, “X-ray photoelectron spectroscopic study of impregnated La0.4Sr0.6Ti0.8Mn0.2O3±d anode material for high temperature-operating solid oxide fuel cell”, Solid State Ionics, vol. 345, 115175 .,