Hyoung-Do Kim, Jong-Heon Kim, Kyung Park, Jung Hyun Kim, Jozeph Park*, Yong Joo Kim*, and Hyun-Suk Kim, *corresponding author, “Effects of fluorine doping on the electrical performance of ZnON thin-film transistors”, ACS Applied Materials & Interfaces, vol. 9, 24688-24695 (2017) [JCR 10%] [IF = 7.504].,

Ju Young Kim, Seulgi Ji, Sungmook Jung, Beyong-Hwan Ryu, Hyun-Suk Kim, Sun Sook Lee, Youngmin Choi, Sunho Jeong*, “3D Printable Composite Doughs for Stretchable, Ultrasensitive and Body-Patchable Strain Sensors”, Nanoscale[JCR 10%] [IF = 7.367].,

Yang-Soo Kim, Dae-Gyu Yang, Jong-Heon Kim, Hyoung-Do Kim and Hyun-Suk Kim*, “Physical and electrical properties of thin Al2O3 thin films grown by the electron cyclotron resonance plasma-enhanced atomic layer deposition (ECR-PEALD) method”, Korean Journal of Materials Research vol. 27, 295-300 .,

Yejin Jo, Ju Young Kim, So-Yun Kim, Yeong-Hui Seo, Cheon Taek Hong, Kwang-Suk Jang, Su Yeon Lee, Sungmook Jung, Beyong-Hwan Ryu, Hyun-Suk Kim, Jang-Ung Park, Youngmin Choi, and Sunho Jeong*, “3D-Printable, highly conductive hybrid composites employing chemically-reinforced, complex dimensional fillers and thermoplastic triblock copolymers”, Nanoscale, vol. 9, 5072-5084 (2017)[JCR 10%] [IF = 7.367].,

Jun Hyung Lim, Seung Muk Lee, Hyun-Suk Kim, Hyun You Kim, Jozeph Park, Seung-Boo Jung, Geun Chul Park, Jungho Kim, and Jinho Joo, “Synergistic effect of Indium and Gallium co-doping on physical properties of ZnO nanorods”, Scientific Reports, vol. 7, 41992 (2017).[Nature Publishing Group] [IF = 4.259].,

Se-Hee Lee, Jae-Hee Kim, Byeong-Ju Park, Jozeph Park*, Hyun-Suk Kim*, and Soon-Gil Yoon*, *corresponding author, “Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications”, Nanotechnology, vol. 28, 075205 (2017).,

Chan-Yong Jeong, Hee-Joong Kim, Dae-Hwan Kim, Hyun-Suk Kim, Tae Sang Kim, Jong-Baek Seon, Sunhee Lee, Dae Hwan Kim*, and Hyuck-In Kwon*, “Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors”, IEEE Electron Device Letters, vol. 37, 1570-1573 (2016).,

Jozeph Park, Yang Soo Kim, Jong Heon Kim, Kyung Park, Yun Chang Park, and Hyun-Suk Kim*, *corresponding author, “The effects of active layer thickness and annealing conditions on the electrical performance of ZnON thin-film transistors”, Journal of Alloys and Compounds, vol. 688, 666-671 (2016).,

Jozeph Park, Yang Soo Kim, Kyung-Chul Ok, Yun Chang Park, Hyun You Kim*, Jin-Seong Park*, and Hyun-Suk Kim*, *corresponding author, “Superior electron transport properties of zinc oxynitride semiconductors: an extensive study on the materials characteristics and the associated field effect devices”, Scientific Reports, vol. 6, 24787 (2016) [Nature Publishing Group] [IF = 5.228].,

Chan-Yong Jeong, Hee-Joong Kim, Dae-Hwan Kim, Hyun-Suk Kim, Eok Su Kim, Tae Sang Kim, Joon Seok Park, Jong-Baek Seon, Kyoung Seok Son, Sunhee Lee, Seong-Ho Cho, Young Soo Park, Dae Hwan Kim*, and Hyuck-In Kwon*, “Investigation of Low-Frequency Noise Properties in High Mobility ZnON Thin-Film Transistors”, IEEE Electron Device Letters, vol. 37, 739-742 (2016).,

Jozeph Park, Nguyen Dinh Trung, Yang Soo Kim, Jong Heon Kim, Kyung Park, Hyun-Suk Kim*, “A study on the competition between bias-induced charge trapping and light-induced instability in In-Ga-Zn-O thin-film transistors”, Journal of Electroceramics, vol. 36, 135-140 (2016).,

Jozeph Park, Chang-Sun Kim, Yang Soo Kim, Yun Chang Park, Hyung Jin Park, Byeong-Soo Bae, Jin-Seong Park, and Hyun-Suk Kim*, *corresponding author, “The effect of ITO and Mo electrodes on the properties and stability of In-Ga-Zn-O thin film transistors”. Journal of Electroceramics, vol. 36, 129-134 (2016).,

Yang-Soo Kim, Jong Heon Kim, and Hyun-Suk Kim*, “High Performance Thin-Film Transistors Based on Zinc Oxynitride Semiconductors: Experimental and First-Principles Studies”, Korean Journal of Materials Research, vol. 26, 42-46 (2016).,

Sungju Choi, Hyeongjung Kim, Chunhyung Jo, Hyun-Suk Kim, Sung-Jin Choi, Dong Myong Kim, Jozeph Park, and Dae Hwan Kim, “The Effect of Gate and Drain Fields on the Competition between Donor-like State Creation and Local Electron Trapping in In-Ga-Zn-O Thin Film Transistors under Current Stress”, IEEE Electron Device Letters, vol. 36, 1336-1339 (2015).,

Jozeph Park, Chang-Sun Kim, Byung Du Ahn, Hojun Ryu, and Hyun-Suk Kim*, *corresponding author, “Flexible In-Ga-Zn-O thin-film transistors fabricated on polyimide substrates and mechanically induced instability under negative bias illumination stress”. Journal of Electroceramics, vol. 35, 106-110 (2015).,