Yeonsung Lee, Inturu Omkaram, Jozeph Park, Hyun-Suk Kim, Ki-Uk Kyung, Wook Park, and Sunkook Kim “A a-Si:H Thin-Film Phototransistor for a Near Infrared Touch Sensor”, IEEE Electron Device Letters, vol. 36, 41-43 (2015).,

Kyung-Chul Ok, Hyun-Jun Jeong, Hyun-Suk Kim*, and Jin-Seong Park*, *corresponding authors, “Highly Stable ZnON Thin-Film Transistors with High Field-Effect Mobility Exceeding 50 cm2/Vs”,IEEE Electron Device Letters, vol. 36, 38-40 (2015).,

J. Park, Tae-Hoon Jung, Hyun-Suk Kim*, and Jin-Seong Park*, “The Growth behavior and properties of atomic layer deposited zinc oxide films using hydrogen peroxide (H2O2)andozone(O3)oxidant”, *corresponding authors, Ceramics International, vol. 41, 1839-1845 (2015).,

M. Veis, M. Kucera, M. Zahradnik, R. Antos, J. Mistrik, Lei Bi, Hyun-Suk Kim, G. F. Dionne, and C. A. Ross, “Optical and magneto-optical properties of Co-doped CeO2-d films in the 0.5 to 4 eV range”, Journal of Applied Physics, vol. 115, 17A940 (2014).,

Taeho Shin, Eunha Lee, Soohwan Sul, Hyungik Lee, Dong-Su Ko, Anass Benayad, Hyun-Suk Kim, and Gyeong-Su Park, “Ultrafast photocarrier dynamics in nanocrystalline ZnOxNythinfilms”,Optics Letters, vol. 39, 5062-5065 (2014).,

Byung Du Ahn*, H.Kim*, Jin-Seong Park, Hyun Jae Kim, *contributed equally, “The influence of oxygen high pressure annealing on the performance and bias instability of amorphous Ge-In-Ga-O thin film transistors”, IEEE Transactions on Electron Device Letters vol. 61, 4132-4136 (2014).,

Byung Du Ahn*, H.Kim*, Dong-Jin Yun, Jin-Seong Park, and Hyun Jae Kim, *contributed equally, “Improvement of Negative Bias Temperature Illumination Stability of Amorphous IGZO Thin-Film Transistors by Water Vapor-Assisted High-Pressure Oxygen Annealing”, ECS Journal of Solid State Science and Technology, vol. 3, Q95 (2014).,

T. W. SEO*, HYUN-SUK KIM*, KWANG-HO LEE, KWUN-BUM CHUNG, and JIN-SEONG PARK, *contributed equally, “High Mobility and Stability of Thin-Film Transistor using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors”, Journal of Electronic Materials, vol. 43, 3177-3183 (2014).,

Hye-Ji Jeon, Seul-Gi Lee, H.Kim*, and Jin-Seong Park*, *corresponding authors, “Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition”, Applied Surface Science, vol. 301, 358 (2014).,

Kyung-Chul Ok, Sang-Hee Ko Park, Chi-Sun Hwang, H.Kim*, Hyun Soo Shin, Jonguk Bae, and Jin-Seong Park*, *corresponding authors, “The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates”, Applied Physics Letters, vol. 104, 063508 (2014).,

Hyun-Suk Kim, and Jin-Seong Park, “The performance and negative bias illumination stability of Hf-In-Zn-O thin film transistors on sputtering conditions” Journal of Electroceramics, vol. 32, 220-223 (2014).,

Kwang-Ho Lee, Kyung-Chul Ok, H. Kim*, Jin-Seong Park*, *corresponding authors, “The influence of oxygen partial pressure on the performance and stability of Ge-doped InGaO thin film transistors”, Ceramics International, vol. 40, 3215-3220 (2014).,

Jin-Seong Park*, H. Kim*, and Il-Doo Kim, *contributed equally, “Overview of electroceramic materials for oxide semiconductor thin film transistors”, Journal of Electroceramics, vol. 32, 117-140 (2014).[Invited Feature Article].,

Hyun-Suk Kim, Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Jong-Baek Seon, Seok-Jun Seo, Sun-Jae Kim, Sunhee Lee, Eok Su Kim, Myoungkwan Ryu, Seungwu Han, Seong-Ho Cho, and Youngsoo Park, “Defect control in zinc oxynitride semiconductor for high-performance and high-stability thin-film transistors”, Solid State Phenomena, vols. 205-206, 446-450 (2014).,

Tae Sang Kim, Hyun-Suk Kim, Joon Seok Park, Kyoung Seok Son, Eok Su Kim, Jong-Baek Seon, Sunhee Lee, Seok-Jun Seo, Sun-Jae Kim, Sungwoo Jun, Kyung Min Lee, Dong Jae Shin, Jaewook Lee, Chunhyung Jo, Sung-Jin Choi, Dong Myong Kim, Dae Hwan Kim, Myungkwan Ryu, Seong-Ho Cho, and Youngsoo Park, “High performance gallium-zinc oxynitride thin film transistors for next-generation display applications”, IEDM Technical Digest, 27.1.1-27.1.3 (2013).,